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Class: SputteringPrevac

_Physical vapor deposition (PVD) technique used to deposit thin films onto a substrate, particularly with the Prevac sputtering machine. In sputtering, high-energy ions (usually from a plasma) bombard a target material, causing atoms from the target to be ejected. These ejected atoms then travel through a vacuum chamber and settle on a substrate, forming a thin film. _

URI: hzb_metadata_schema:SputteringPrevac

classDiagram class SputteringPrevac click SputteringPrevac href "../SputteringPrevac" Sputtering <|-- SputteringPrevac click Sputtering href "../Sputtering" SputteringPrevac : base_pressure SputteringPrevac : date SputteringPrevac : DC_RF SputteringPrevac : flow_rate SputteringPrevac : gas SputteringPrevac : holder SputteringPrevac : id SputteringPrevac : iri SputteringPrevac : name SputteringPrevac : notes SputteringPrevac : orientation SputteringPrevac : process_user SputteringPrevac : ramp SputteringPrevac : rotation SputteringPrevac : sample_owner SputteringPrevac : sputter_pressure SputteringPrevac : sputtering_prevac_id SputteringPrevac : step_notes SputteringPrevac : step_number SputteringPrevac : substrate_id SputteringPrevac : substrate_temperature SputteringPrevac : target SputteringPrevac : target_position SputteringPrevac : target_power SputteringPrevac : temperature SputteringPrevac : time SputteringPrevac : z_position

Inheritance

Slots

Name Cardinality and Range Description Inheritance
sputtering_prevac_id 0..1
String		 Identifier of the sputtering process in the prevac machine direct
substrate_id 0..1
String		 Identifier of the substrate material (usually Silicon) direct
sample_owner 0..1
String		 Person owning the sample direct
process_user 0..1
String		 Person performing the process on the sample direct
date 0..1
String		 Date on which the process was performed direct
holder 0..1
String		 Type of sample holder direct
notes 0..1
String		 Any notes for supporting the documentation of the process direct
step_number 0..1
Integer		 Many consecutive processes or steps of sputtering can be performed to layer t... direct
orientation 0..1
String		 Refers to the spatial alignment and positioning of the target within the sput... direct
sputter_pressure 0..1
Float		 Pressure of the gas (typically argon) inside the vacuum chamber during the sp... direct
substrate_temperature 0..1
Float		 Temperature of the substrate onto which the thin film is being deposited duri... direct
ramp 0..1
Float		 Controlled increase or decrease of temperature direct
rotation 0..1
Float		 Angular velocity at which the target material (or in some cases, the substrat... direct
z_position 0..1
Float		 Vertical position of the substrate or the target material in the sputtering c... direct
gas 0..1
String		 Gas used to ionize and bombard the target material (usually Argon) direct
flow_rate 0..1
Float		 Rate at which gases (typically inert gases like argon or reactive gases like ... direct
target_position 0..1
Integer		 Position of the target source direct
target 0..1
String		 Target is the material that gets bombarded by ions and subsequently ejected (... direct
target_power 0..1
Float		 The amount of electrical power applied to the sputtering target to generate t... direct
DC_RF 0..1
String		 DC (Direct Current) and RF (Radio Frequency) refer to the types of electrical... direct
time 0..1
String		 Duration time of the sputtering step/process direct
base_pressure 0..1
Float		 Pressure inside the vacuum chamber before the introduction of the working gas... direct
temperature 0..1
Float		 Temperature inside the vacuum chamber before the introduction of the working ... direct
step_notes 0..1
String		 To add any notes regarding to the observations on that exact step on the whol... direct
name 0..1
String		 A human-readable name for a thing Entity, NamedEntity
id 1
Uriorcurie		 A unique identifier for a thing Entity
iri 0..1
String		 Internationalized Resource Identifier Entity

Identifier and Mapping Information

Schema Source

  • from schema: https://w3id.org/https://github.com/HZB-CE-DataSchemas//hzb-catalysisLabs-schema

Mappings

Mapping Type Mapped Value
self hzb_metadata_schema:SputteringPrevac
native hzb_metadata_schema:SputteringPrevac

LinkML Source

Direct

name: Sputtering_prevac
description: 'Physical vapor deposition (PVD) technique used to deposit thin films
  onto a substrate, particularly  with the Prevac sputtering machine.  In sputtering,
  high-energy ions (usually from a plasma) bombard a target material,  causing atoms
  from the target to be ejected. These ejected atoms then travel through a vacuum
  chamber and settle on a substrate, forming a thin film. '
from_schema: https://w3id.org/https://github.com/HZB-CE-DataSchemas//hzb-catalysisLabs-schema
is_a: Sputtering
attributes:
  sputtering_prevac_id:
    name: sputtering_prevac_id
    description: Identifier of the sputtering process in the prevac machine.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  substrate_id:
    name: substrate_id
    description: Identifier of the substrate material (usually Silicon).
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  sample_owner:
    name: sample_owner
    description: Person owning the sample.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  process_user:
    name: process_user
    description: Person performing the process on the sample.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  date:
    name: date
    description: Date on which the process was performed.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  holder:
    name: holder
    description: Type of sample holder.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  notes:
    name: notes
    description: Any notes for supporting the documentation of the process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  step_number:
    name: step_number
    description: Many consecutive processes or steps of sputtering can be performed
      to layer the materials. This parameter documents the number of step or id.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: integer
    required: false
  orientation:
    name: orientation
    description: Refers to the spatial alignment and positioning of the target within
      the sputtering chamber. The target is typically positioned at an angle relative
      to the substrate. This angle can affect the trajectory of the sputtered atoms
      and the uniformity of deposition on the substrate.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
  sputter_pressure:
    name: sputter_pressure
    description: Pressure of the gas (typically argon) inside the vacuum chamber during
      the sputtering process. This pressure is usually measured in millibars (mbar),
      and it plays a critical role in determining the behavior of the plasma, the
      ion bombardment, and the deposition quality.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  substrate_temperature:
    name: substrate_temperature
    description: Temperature of the substrate onto which the thin film is being deposited
      during the sputtering process. This parameter is crucial because it can significantly
      influence the properties of the deposited film, such as its microstructure,
      morphology, adhesion, and overall performance.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  ramp:
    name: ramp
    description: Controlled increase or decrease of temperature.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  rotation:
    name: rotation
    description: Angular velocity at which the target material (or in some cases,
      the substrate) is rotated during the sputtering process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  z_position:
    name: z_position
    description: Vertical position of the substrate or the target material in the
      sputtering chamber.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  gas:
    name: gas
    description: Gas used to ionize and bombard the target material (usually Argon).
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
  flow_rate:
    name: flow_rate
    description: Rate at which gases (typically inert gases like argon or reactive
      gases like oxygen or nitrogen) are introduced into the sputtering chamber. It
      plays a crucial role in controlling the plasma formation and the quality of
      the deposited thin film.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  target_position:
    name: target_position
    description: Position of the target source. In this machine case, from 1-8.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: integer
  target:
    name: target
    description: Target is the material that gets bombarded by ions and subsequently
      ejected (sputtered) onto a substrate to form a thin film. (e.g. Al, Ti, Pt,
      etc).
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
  target_power:
    name: target_power
    description: The amount of electrical power applied to the sputtering target to
      generate the plasma and eject atoms from the target surface.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  DC_RF:
    name: DC_RF
    description: DC (Direct Current) and RF (Radio Frequency) refer to the types of
      electrical power used to energize the sputtering target, and the choice between
      them depends on the properties of the target material.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
  time:
    name: time
    description: Duration time of the sputtering step/process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string
  base_pressure:
    name: base_pressure
    description: Pressure inside the vacuum chamber before the introduction of the
      working gas (usually argon) for the sputtering process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  temperature:
    name: temperature
    description: Temperature inside the vacuum chamber before the introduction of
      the working gas (usually argon) for the sputtering process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: float
  step_notes:
    name: step_notes
    description: To add any notes regarding to the observations on that exact step
      on the whole process. For example, inhomogeneous, detached, dirty sample.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    domain_of:
    - Sputtering_prevac
    range: string

Induced

name: Sputtering_prevac
description: 'Physical vapor deposition (PVD) technique used to deposit thin films
  onto a substrate, particularly  with the Prevac sputtering machine.  In sputtering,
  high-energy ions (usually from a plasma) bombard a target material,  causing atoms
  from the target to be ejected. These ejected atoms then travel through a vacuum
  chamber and settle on a substrate, forming a thin film. '
from_schema: https://w3id.org/https://github.com/HZB-CE-DataSchemas//hzb-catalysisLabs-schema
is_a: Sputtering
attributes:
  sputtering_prevac_id:
    name: sputtering_prevac_id
    description: Identifier of the sputtering process in the prevac machine.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: sputtering_prevac_id
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  substrate_id:
    name: substrate_id
    description: Identifier of the substrate material (usually Silicon).
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: substrate_id
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  sample_owner:
    name: sample_owner
    description: Person owning the sample.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: sample_owner
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  process_user:
    name: process_user
    description: Person performing the process on the sample.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: process_user
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  date:
    name: date
    description: Date on which the process was performed.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: date
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  holder:
    name: holder
    description: Type of sample holder.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: holder
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  notes:
    name: notes
    description: Any notes for supporting the documentation of the process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: notes
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
    required: false
  step_number:
    name: step_number
    description: Many consecutive processes or steps of sputtering can be performed
      to layer the materials. This parameter documents the number of step or id.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: step_number
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: integer
    required: false
  orientation:
    name: orientation
    description: Refers to the spatial alignment and positioning of the target within
      the sputtering chamber. The target is typically positioned at an angle relative
      to the substrate. This angle can affect the trajectory of the sputtered atoms
      and the uniformity of deposition on the substrate.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: orientation
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
  sputter_pressure:
    name: sputter_pressure
    description: Pressure of the gas (typically argon) inside the vacuum chamber during
      the sputtering process. This pressure is usually measured in millibars (mbar),
      and it plays a critical role in determining the behavior of the plasma, the
      ion bombardment, and the deposition quality.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: sputter_pressure
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  substrate_temperature:
    name: substrate_temperature
    description: Temperature of the substrate onto which the thin film is being deposited
      during the sputtering process. This parameter is crucial because it can significantly
      influence the properties of the deposited film, such as its microstructure,
      morphology, adhesion, and overall performance.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: substrate_temperature
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  ramp:
    name: ramp
    description: Controlled increase or decrease of temperature.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: ramp
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  rotation:
    name: rotation
    description: Angular velocity at which the target material (or in some cases,
      the substrate) is rotated during the sputtering process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: rotation
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  z_position:
    name: z_position
    description: Vertical position of the substrate or the target material in the
      sputtering chamber.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: z_position
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  gas:
    name: gas
    description: Gas used to ionize and bombard the target material (usually Argon).
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: gas
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
  flow_rate:
    name: flow_rate
    description: Rate at which gases (typically inert gases like argon or reactive
      gases like oxygen or nitrogen) are introduced into the sputtering chamber. It
      plays a crucial role in controlling the plasma formation and the quality of
      the deposited thin film.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: flow_rate
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  target_position:
    name: target_position
    description: Position of the target source. In this machine case, from 1-8.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: target_position
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: integer
  target:
    name: target
    description: Target is the material that gets bombarded by ions and subsequently
      ejected (sputtered) onto a substrate to form a thin film. (e.g. Al, Ti, Pt,
      etc).
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: target
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
  target_power:
    name: target_power
    description: The amount of electrical power applied to the sputtering target to
      generate the plasma and eject atoms from the target surface.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: target_power
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  DC_RF:
    name: DC_RF
    description: DC (Direct Current) and RF (Radio Frequency) refer to the types of
      electrical power used to energize the sputtering target, and the choice between
      them depends on the properties of the target material.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: DC_RF
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
  time:
    name: time
    description: Duration time of the sputtering step/process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: time
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
  base_pressure:
    name: base_pressure
    description: Pressure inside the vacuum chamber before the introduction of the
      working gas (usually argon) for the sputtering process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: base_pressure
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  temperature:
    name: temperature
    description: Temperature inside the vacuum chamber before the introduction of
      the working gas (usually argon) for the sputtering process.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: temperature
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: float
  step_notes:
    name: step_notes
    description: To add any notes regarding to the observations on that exact step
      on the whole process. For example, inhomogeneous, detached, dirty sample.
    from_schema: https://w3id.org/anak-velazquez/catlabs/
    rank: 1000
    alias: step_notes
    owner: Sputtering_prevac
    domain_of:
    - Sputtering_prevac
    range: string
  name:
    name: name
    description: A human-readable name for a thing
    from_schema: https://w3id.org/https://github.com/HZB-CE-DataSchemas//hzb-catalysisLabs-schema
    rank: 1000
    slot_uri: schema:name
    alias: name
    owner: Sputtering_prevac
    domain_of:
    - Entity
    - NamedEntity
    range: string
  id:
    name: id
    description: A unique identifier for a thing
    from_schema: https://w3id.org/https://github.com/HZB-CE-DataSchemas//hzb-catalysisLabs-schema
    rank: 1000
    slot_uri: schema:identifier
    identifier: true
    alias: id
    owner: Sputtering_prevac
    domain_of:
    - Entity
    range: uriorcurie
    required: true
  iri:
    name: iri
    description: Internationalized Resource Identifier
    from_schema: https://w3id.org/https://github.com/HZB-CE-DataSchemas//hzb-catalysisLabs-schema
    rank: 1000
    alias: iri
    owner: Sputtering_prevac
    domain_of:
    - Entity
    range: string